2N7000 2N7000 n n-channel enhancement mode field effect transistor n-kanal feldeffekt transistor C anreicherungstyp n version 2011-02-16 dimensions - ma?e [mm] power dissipation verlustleistung 350 mw plastic case kunststoffgeh?use to-92 (10d3) weight approx. gewicht ca. 0.18 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped in ammo pack standard lieferform gegurtet in ammo-pack maximum ratings (t a = 25c) grenzwerte (t a = 25c) 2N7000 drain-source-voltage C drain-source-spannung v dss 60 v drain-gate-voltage C drain-gate-spannung r gs 1 m v dgr 60 v gate-source-voltage C gate-source-spannung dc t p < 50 s v gss v gss 20 v 4 0 v power dissipation C verlustleistung p tot 350 mw drain current continuos C drainstrom (dc) peak drain current C drain-spitzenstrom i d i dm 200 ma 500 ma operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c ? diotec semiconductor ag http://www.diotec.com/ 1 1 6 1 8 9 2 x 2.54 s g d
2N7000 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source durchbruchspannung i d = 10 a v (br)dss 60 v drain-source leakage current C drain-source leckstrom g short v ds = 48 v v ds = 48 v, t j = 125c i dss i dss 1 a 1 ma gate-body leakage current C gate-substrat leckstrom v gs = 15 v i gss 10 na gate-threshold voltage C gate-source schwellspannung v gs = v ds , i d = 1 ma v gs(th) 0.8 v 3 v drain-source on-voltage C drain-source-spannung v gs = 10 v , i d = 500 ma v gs = 4.5 v , i d = 75 ma v ds(on) 2.5 v 0.45 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 10 v , i d = 500 ma v gs = 4.5 v, i d = 75 ma r ds(on) r ds(on) 5 6 forward transconductance C bertragungssteilheit v ds = 10 v , i d = 200 ma g fs 100 ms input capacitance C eingangskapazit?t v ds = 25 v, f = 1 mhz c iss 60 pf output capacitance C ausgangskapazit?t v ds = 25 v, f = 1 mhz c oss 25 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 25 v, f = 1 mhz c rss 5 pf turn-on delay time C einschaltverz?gerung v dd = 15 v, r l = 30 , i d = 0.5 a, v gs = 10 v, r g = 25 t on 10 ns turn-off delay time C ausschaltverz?gerung v dd = 15 v, r l = 30 , i d = 0.5 a, v gs = 10 v, r g = 25 t off 10 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 357 k/w 1 ) 1 device mounted on standard pcb material bauteil montiert auf standard-leiterplattenmaterial 2 http://www.diotec.com/ ? diotec semiconductor ag
|
